Round Single-stage module
TECB-52-114-(15.2-6.0-50)
-59/41-70-RCH-S


Intended for application in industrial and medical device

        We produce a wide range of thermoelectric modules with different dimensions and configuration which can be used for various applications.

        Micro-modules are intended for cooling of radiation detectors and other components of electronic devices.

        Large modules with significant cooling capacity are used in industrial machinery, testing equipment and systems of environmental conditioning.

        Our technical capability of growing semiconductor materials allows optimization of electrical, thermo-electrical and mechanical properties of a material for particular application and manufacturing the module according customer specifications.

        Our modules are manufactured using the proprietary process that assures reliable operation at ambient temperature up to 250 °C.

• Optoelectronics :

1. High-rat e seed sensor for planters:

• • to be inst alled on a standard planter seed tube

  • impro ved accuracy of detection of small seeds and high-rate soybeans

  • improved immunity to ambient light

  • power supply voltage range from 7 to 16 V

  • current consumption is less than 40 mA

  • open collector output

2. Silicon photodiode with daylight filter:

• • sensitive to infrared light from 700 to 1000 nm

  • sensitivity at 850 nm is higher than 0.5 A/W

  • photosensitive area is 15*0.5 sq. mm

  • maximum power supply voltage is 7 V

  • dark current is less than 100 nA @ 5 V and 20 C

3. Silicon photodiode array with daylight filter:

• • sensitive to infrared light from 700 to 1000 nm

  • sensitivity at 850 nm is higher than 0.5 A/W

  • 4 photodiodes with sensitive area 3.75*0.5 sq. mm each

  • maximum power supply voltage is 7 V

  • dark current is less than 10 nA @ 5 V and 20 C

4. Reflective transducer with daylight filter:

• • six LED array to illuminate objects in front of window

  • LED maximum current is 30 mA

  • silicon photodiode to detect the reflected light

  • photodiode sensitive to infrared light from 700 to 1000 nm

  • photodiode sensitivity at 850 nm is higher than 0.5 A/W

  • photodiode sensitive area is 15*0.5 sq. mm

  • photodiode maximum power supply voltage is 7 V

  • photodiode dark current is less than 100 nA @ 5 V and 20 C

5. Reflective sensor:

• • an infrared LED to illuminate objects in front of the sensor

  • LED maximum current is 10 mA

  • silicon phototransistor to detect the reflected light

  • signal conditioning and communication circuitry

  • two-wire interface to external processing module

  • signal pulse amplitude on the power supply line is 2 mA